SK Hynix has commenced sampling of its next-gen HBM4E memory, offering up to 16 Gbps speeds and 48 GB capacities.
SK Hynix Races Samsung In Sampling First HBM4E DRAM Modules For Next-Gen AI Solutions
The acceleration in AI has pushed DRAM manufacturers to dial up their development plans. As such, SK Hynix is racing its rival Samsung to deliver the first HBM4E memory solutions to partners who will be using it to power their next-generation datacenters.
The HBM4E memory will play a crucial role for next-gen datacenters as it will power some heavy-weight chips, NVIDIA Rubin Ultra, and AMD Instinct MI500. These two chip platforms are poised to generate lots of revenue in the AI segment, and DRAM makers are backing them up in a big way.
The sampling from SK Hynix begins just a few weeks after Computex 2026, where the company previewed the same HBM4E memory, featuring up to 48 GB capacities, and speeds of up to 16 Gbps. Samsung was also at the showfloor previewing its own HBM4E and HBM5 technologies with HPB (Heat Path Block).
| Spec / Feature | HBM4E (48GB, 12-Hi) | HBM4 (Peak Spec, 48GB, 16-Hi) | HBM3E (36GB, 12-Hi) |
|---|---|---|---|
| Capacity | 48GB | 48GB | 36GB |
| Stack Height | 12-Hi | 16-Hi | 12-Hi |
| Die Density | 1.5× improvement | +33% per core die | — |
| Bandwidth (per pin) | 3.2 Gbps (+50%) | Up to 16 Gbps | 1.2 Gbps (+20%) |
| Memory Bandwidth | 1.5 TB/s | Higher (AI workloads) | 1.2 TB/s |
| I/O Channels | x1024 | x2048 | x1024 |
| Voltage | 1.2V | 1.2V | 1.2V |
| Efficiency | 1.5× density gain | +40% power efficiency | +10% power efficiency |
| Process Node | — | TSMC N3E | — |
Press Release: SK hynix announced today that it has shipped samples of HBM4E, a next-generation DRAM for AI, to major customers.
“The company was able to deliver samples of the 12-stack HBM4E on schedule thanks to its advanced HBM development and production expertise for HBM,” said SK hynix, adding that “We will work closely with partners for mass production in a timely manner.”
The 12-layer HBM4E shows improvements in both performance and power efficiency. The product features a maximum data processing speed of 16Gbps per pin and power efficiency that is up more than 20 percent from previous models. These enhancements improve data processing capabilities for AI training and inference.
The HBM4E reduces data transfer latency through its latest interface and design optimization while maintaining stable operation in high-bandwidth environments. This enables customers to increase efficiency in processing data for AI datacenters and large-scale computing systems.
SK hynix utilizes Advanced MR-MUF technology for HBM4E products to achieve a 48GB capacity in a 12-layer stack while ensuring structural stability. In particular, the company has also improved heat resistance by 17 percent, compared to the preceding HBM4, enabling stable operation of memory chips in high-performance computing environments.
SK hynix has successfully supplied optimized memory solutions to customers based on its expertise in the mass production and supply of HBM3, HBM3E, and HBM4. Leveraging its market-proven product reliability and supply capabilities, the company will support the development of next-generation infrastructure while helping address AI system bottlenecks
About the author: A Software Engineer by training and a PC enthusiast by passion, Hassan Mujtaba serves as Wccftech's Senior Editor for hardware section. With years of experience in the industry, he specializes in deep-dive technical analysis of next-generation CPU and GPU architectures, motherboards, and cooling solutions. His work involves not only breaking news on upcoming technologies but also extensive hands-on reviews and benchmarking.
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