Korean memory manufacturer Samsung is gearing up to produce its next-generation 1d DRAM, suggests a report from the Korean media. 1d manufacturing technology is the latest in the industry, and it is equivalent to Micron's 1-delta node. As of now, Samsung is discussing equipment plans for the next-generation RAM with its manufacturing partners as part of its preparation to begin mass production as early as late 2027.
Samsung Evaluating Internal Capabilities for 1d DRAM Production, Says Report
Industry sources quoted by ZDNet Korea outline that Samsung is developing equipment with its partners to kick off the next generation DRAM production. The firm's latest DRAM chips are currently manufactured through the 1c RAM technology, which is the highest-end technology that manufacturers the memory chips on a horizontal format. The 1c technology extensively relies on extreme ultraviolet (EUV) lithography technology and metal gates to benefit from the firm's experience in logic fabrication.
Samsung aims to introduce its manufacturing equipment for the next generation memory chips into its factories as early as the second quarter of 2027, say the sources. Consequently, the machines could produce the advanced chips by 2027's second half if the firm can meet its aggressive timeline.
Mass Production Could Kickoff In Late 2027, Believe Sources
1d DRAM marks a fundamental shift over traditional technologies as it is the first to adopt vertical stacking of the capacitors. This approach is fundamentally different from previous generations, which had laid down the memory cells side by side. Further complexity is added to the process by relying on a different wafer for the peripheral circuitry and integrating it with the wafer of the memory cell circuits.
With Samsung planning to introduce 1d DRAM production machinery by next year's first half, the chips can enter mass production in the second half. Sources quoted by ZDNet add that the firm should concretize its mass production plans by the end of 2026.
The importance of memory in the global semiconductor supply chain has grown in the AI era. AI chips require high-performance high-bandwidth memory (HBM), which is manufactured by stacking DRAM chips on top of each other. Samsung's 1c DRAM memory is used in the latest generation HBM4 memory, and industry sources believe that the 1d chips could become a part of the next generation HBM5E chips. Samsung preferred to skip older generation DRAM chips for HBM and paired its 1c memory with in-house wafer dies manufactured through the 4-nanometer process technology.
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