Samsung has reportedly produced the world's first "standalone" DRAM module that uses a process tech below 10nm.
Samsung's New Sub-10nm DRAM Technology To Boost Densities & Uses New Materials
For long, the DRAM industry has relied on a 10nm process technology for producing integrated circuits. 10nm DRAM technologies range from 1x, 1y, 1x, 1a, 1b, 1c, and 1d. Now, Samsung is working on a brand new 10a process technology for DRAM that goes below the official "10nm" process limit.
Samsung Electronics has produced the world's first single-digit nanometer DRAM working die. It is reported that the company plans to rapidly secure yield by adjusting process conditions based on the working die.
According to industry sources on the 24th, Samsung Electronics reportedly confirmed a working die during the process of inspecting die characteristics after producing wafers using the 10a process last month. This is the result of the first application of the 4F square cell structure and the Vertical Channel Transistor (VCT) process.
With 10a, it is being analyzed that the process technology will scale down to 9.5-9.7nm, making it the first sub-10nm process technology in the industry. The key changes that have made the new tech possible are the "4F Square Cell Structure" and a VCT (Vertical Channel Transistor) process.
As of right now, Samsung is expected to complete the development of its 10a DRAM with these changes this year, and mass production is being slated for 2028. This new structure will be first adopted by 10a, & will see further refinements in 10b and 10c generations. The 10d DRAM will move to a 3D DRAM tech & is slated for a 2029-2030 release.
Currently, DRAM products make use of a 6F structure, making a rectangular block measuring 3Fx2F. With 4F, you get a more square structure (2Fx2F). Just by changing the structure to 4F, DRAM makers are able to increase the cell density of each IC by 30-50%. This not only provides denser capacity but also helps to save power.
The new DRAM will also leverage newer materials such as Indium Gallium Zinc Oxide (IGZO) compared to Silicon used on previous products. With IGZO, there are fewer leaks in the narrower cells, ensuring data retention.
Samsung's competitors, such as Micron, are currently holding off their 4F plans and will wait for 3D DRAM instead.
Meanwhile, Chinese manufacturers who don't have access to advanced lithography equipment are going to face difficulty in producing 3D DRAM. Though with the possibility of 3D DRAM being similar to the design of 3D NAND, that gives some hope to Chinese manufacturers. Meanwhile, the development of 3D DRAM is speeding up with multiple companies working on the tech to address the growing demand in the AI segment.
News Source: The Elec
About the author: A Software Engineer by training and a PC enthusiast by passion, Hassan Mujtaba serves as Wccftech's Senior Editor for hardware section. With years of experience in the industry, he specializes in deep-dive technical analysis of next-generation CPU and GPU architectures, motherboards, and cooling solutions. His work involves not only breaking news on upcoming technologies but also extensive hands-on reviews and benchmarking.
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