Samsung bonds two 450-layer NAND cells into one chip as it chases 1000-layer SSDs that quadruple capacity by 2030

Samsung's next-generation NAND Flash for SSDs will offer over 900+ layers, with two stacks bonded together for increased storage capacities.

Samsung Wants To Bond Two NAND Cells Together, Forming A Large 900-1000+ Layer Storage Solution For Future SSDs

Last month, we reported that Samsung was working towards 1000-layer NAND using brand new materials and bonding technologies. At the VLSI Symposium 2026, Samsung has revealed its full plans on how they aim to achieve that goal.

In its latest slide, Samsung states that there's a big demand for high-capacity SSDs, and they are working towards an accelerated roadmap that focuses on increasing the number of layers each NAND chip can pack. Currently, NAND makers have entered the 400-layer era and aim to expand up to 1000 layers for high-capacity applications around 2030.

By 2029, Samsung aims to achieve 420-Layer NAND solutions and over 560 layers by 2030. Then, at the start of the next decade, Samsung is planning to double this with over 1000-layer solutions. Doubling the number of layers is going to result in some drawbacks related to warpage and costs, but Samsung is already working on the solutions. The NAND maker claims to have successfully chucked the future design using warpage control, and new processes also enable advanced overlay correction while leaving room for further improvement.

To achieve a staggering 900-Layer V-NAND, Samsung had a few obstacles to overcome, with wafer warping being one of the primary concerns. But that has been resolved with the introduction of the Upper Chuck Design. Other fixes included misalignment errors through the use of "Overlay Correction" technologies.

Currently, SK Hynix leads the race as it was the first to develop and offer 321-layer NAND technology. The work is already underway on 400-layer NAND, which will be achieved using Vertical Bonding at Samsung & Hybrid Bonding at SK Hynix.

Samsung working on 900L+ NAND for 2030 and beyond.
It means that 8 TB QLC M.2 drive could be a 32 TB drive.
Soon™ pic.twitter.com/CFZ8Iuny0I

— 𝐷𝑟. 𝐼𝑎𝑛 𝐶𝑢𝑡𝑟𝑒𝑠𝑠 (@IanCutress) June 22, 2026

Samsung presents their multi-layer 900/1000-layer NAND solution to house two 450-layer cells, each connected using CMB (Cell-Multi Bonding). Dr. Ian Cutress of MoreThanMoore says that with such a solution, an 8 TB QLC SSD can offer up to 32 TB capacities.

At the same time, Chinese YMTC (Yangtze Memory Technologies Co) is also speeding up its NAND plans. The company already offers 294-layer and 232-layer NAND devices and is closing the gap with offshore companies such as Samsung, SK Hynix, and Micron. YMTC is also investing big in new fabs, which are set to double its current wafer output capacity at a crucial time when the markets are facing a significant supply-demand gap due to the AI hyper-cycle.

The stacked NAND approach to achieve 900+ layers is still in a prototype stage, but it paves the path ahead for future storage expansion. 1000-Layer V-NAND is currently aiming for a 2030 release with 400+ layers rolling out in the coming years.

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