G.Skill launches its T5 NEO R-DIMM overclocked memory kits for AMD Threadripper PRO CPUs, with up to DDR5-6400 speeds & 512 GB capacities.
Big Capacity, Faster Speeds: G.Skill Brings Both To AMD Threadripper PRO Platforms With T5 NEO R-DIMM Memory Kits
Press Release: G.SKILL International Enterprise Co., Ltd. is thrilled to announce the release of its latest high-performance T5 Neo series DDR5-6400 CL38 512GB (64GBx8) overclocked DDR5 R-DIMM memory solution.
Specifically engineered for AMD Ryzen Threadripper PRO series processors and compatible AMD WRX90 chipset motherboards, this T5 Neo DDR5 R-DIMM memory kit leverages AMD EXPO memory overclocking technology and a high-quality 16-layer PCB design to deliver exceptional speed, high kit capacity, and reliability for professional workstations.
DDR5-6400 CL38-48-48-102 512GB (64GBx8)
With a total kit capacity of 512GB across eight 64GB modules, the T5 Neo series memory kit is built to meet the demands of intensive workloads. From AI model training, large-scale data analytics, memory-intensive simulations, professional applications, and high-resolution content creation, this high-capacity memory configuration enables professionals to work with significantly larger datasets, making it the ideal choice for next-generation workstations that require both exceptional bandwidth and expansive capacity to accelerate productivity. Please refer to the screenshots below for Memtest validation on the ASUS Pro WS WRX90E-SAGE SE motherboard with AMD Ryzen Threadripper PRO 9945WX processor.
Premium 16-Layer PCB for Improved Signal Integrity
G.SKILL T5 Neo series DDR5 R-DIMM modules are constructed with a 16-layer PCB design, a significant upgrade from previous 8- or 10-layer designs. The increase in the PCB layer count improves signal integrity for better reliability and stability in data transmission under high-performance or overclocked workloads - making it an ideal DDR5 R-DIMM memory choice for high-performance computing applications on high-end workstations.
Enhanced Voltage Protection with Added TVS & Fuse
Safeguarding against irregular power levels, each of G.SKILL T5 Neo series DDR5 R-DIMM modules is equipped with two bi-directional TVS diodes and a fuse to ensure sustained voltage levels are maintained and protect the memory module against power spikes. These additional layers of protection serve to enable optimal stability and reliability, making the new G.SKILL T5 Neo series DDR5 R-DIMM memory the ultimate choice for critical workloads and next-gen high-performance computing systems.
Availability
This high-capacity, overclocked G.SKILL T5 Neo series DDR5-6400 CL38 512GB (64GBx8) memory kit is expected to roll out to G.SKILL worldwide distribution partners starting in August 2025.
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