Samsung provided an update on its data center portfolio in its latest earnings, confirming that next-gen HBM3E, DDR5 & V-NAND are coming in Q2.
Samsung Has Multiple Next-Gen Data Center Products Coming This Year: 12-Hi HBM3E, 128 GB DDR5, 9th Gen V-NAND & More
The South Korean giant reported that it was witnessing record growth in the AI domain and will be pushing forward with multiple new product lines in this segment. First up, Samsung has started the mass production of its HBM3E "Shinebolt" memory, which will first ship in 8-Hi stacks this month & will be followed by the 12-Hi variant in the second quarter. The next-gen memory solution will offer up to 36 GB capacities per stack for up to 288 GB products on an 8-module chip like AMD's MI300X.
Samsung Electronics began mass production of HBM3E 8-layer in April to respond to demand for generative AI, and plans to mass-produce 12-layer products within the second quarter.
In addition, we plan to strengthen our leadership in the server market through mass production and customer shipment of 1b nano 32Gb (gigabit) DDR5-based 128GB (gigabyte) products in the second quarter.
NAND plans to respond in a timely manner to demand for AI by developing an ultra-high capacity 64TB SSD and providing samples in the second quarter, and also enhance its technological leadership by starting mass production of V9 for the first time in the industry.
AMD has reportedly signed a deal with Samsung Foundry who will be supplying the HBM3E DRAM for use in existing and next-gen products such as the refreshed MI350/MI370 GPUs which are said to feature increased memory capacities.
On the DDR5 DRAM side of things, Samsung will be rolling out its 1b(nm) 32 Gb memory modules for mass production in the second quarter of 2024. These memory ICs will be used to develop up to 128 GB modules. Samsung has already shipped the first samples of its next-gen DDR5 solutions to customers.
Lastly, Samsung is updating on the SSD V-NAND front which will see the introduction of 64 TB data center SSDs. These SSDs will be sampled to customers in the second quarter of 2024 and the firm is also expecting the mass production of its 9th Gen V-NAND commencing in the third quarter. The 9th Gen V-NAND SSDs will be based on a QLC (Quad Level Cell) design. Reports suggest that TLC V-NAND (9th Gen) will begin production this month and will feature 33% faster transfer speeds rated at 3200 MT/s. These SSDs will leverage the latest PCIe Gen5 standard.
About the author: A Software Engineer by training and a PC enthusiast by passion, Hassan Mujtaba serves as Wccftech's Senior Editor for hardware section. With years of experience in the industry, he specializes in deep-dive technical analysis of next-generation CPU and GPU architectures, motherboards, and cooling solutions. His work involves not only breaking news on upcoming technologies but also extensive hands-on reviews and benchmarking.
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