Given the very juicy margins in the memory chip business right now, it's not so unthinkable that Intel might soon dip its toes, so to say, in this red-hot sector, especially as a confluence of anecdotal evidence suggests that the chipmaker is at least thinking along those lines.
Intel references its hiring of SK hynix's former CEO when an analyst brings up its Z-Angle Memory plans
Two of the biggest takeaways from Intel's just-concluded earnings call relate to the 14A node's risk production now commencing in 2027, and the chipmaker's confidence in hiking its CapEx "significantly" next year, hinting at its visibility into confirmed orders.
In our opinion, however, the most significant portion of the earnings call related to a question about Intel's memory-related plans.
Do note that Intel is already developing Z-Angle Memory (ZAM), which is a 3D-stacked DRAM where diagonal interconnects replace vertical through-silicon vias (TSVs), forming a central thermal pillar that better dissipates heat. It also leverages copper-to-copper hybrid bonding and eschews capacitors for greater density.
Of course, Intel is aiming to commercially deploy this technology only by 2029. Even so, the chipmaker's response to the memory-related query was somewhat idiosyncratic, noting that "Intel have [sic] a rich history in the memory. And recently we hired Shou-Chi Lee to join us. He used to be the CEO of SK Hynix."
The reference to SK hynix's former CEO was quite significant, especially amid persistent rumors that Intel and SK hynix might enter into a JV on its $28 billion Ohio One fab, allowing Intel not only to offload some of the associated costs on to SK hynix, but also bolster its nascent efforts of combining logic and memory.
Clearly something is cooking beneath the surface, and SK hynix's former CEO apparently has a role in it. Otherwise, Intel would not have been so willing to single him out when discussing its memory-related plans.
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