Innosilicon’s LPDDR6 Memory IP Lands at Major Korean DRAM Maker, as It Unveils GDDR7, HBM4, & PCIe 6.0 Technologies Spanning 28nm to 3nm

Innosilicon has confirmed that a major Korean DRAM maker will be utilizing its LPDDR6 memory IP as it showcases the full range of memory & storage solutions.

Innosilicon Aims To Break The Memory Wall With a Fully-Domestic Produced DRAM/Storage IP, With Its LPDDR6 IP Landing In Korea

Earlier this year, Innosilicon announced that its LPDDR6/5X memory controller IP was delivered to the first customers. Today, at a conference in Shanghai, China, the company announced that one of the customers is a major DRAM manufacturer based in Korea.

During the event, Innosilicon unveiled its broad range of memory and storage controller IPs, which include next-generation technologies such as HBM4, GDDR7, LPDDR6, DDR5 MRDIMM, PCIe 6.0, and 224G SerDes.

To address the memory wall computing bottleneck, Xindong Technology has developed a full-category high-bandwidth memory IP matrix, comprehensively covering mainstream high-end storage interface solutions such as LPDDR6/5X, GDDR7, HBM4/3E, and MRDDR5。 Among them the self-developed LPDDR6 memory IP can achieve a maximum operating speed of 14.4 Gbps.

Through end-to-end timing optimization and iterative signal integrity simulation, transmission jitter and signal loss are effectively reduced, while single-card memory read/write bandwidth and operational stability are significantly enhanced. This approach precisely addresses the demands of high-frequency KV Cache read/write operations in large-model long-context scenarios, overcoming fundamental bottlenecks in single-card token inference efficiency and establishing a robust memory foundation for maximizing single-node AI computing performance.

Machine Translated via Innosilicon

These technologies are designed to address the growing memory and bandwidth requirements in the AI and HPC segments. Innosilicon relies heavily on China's domestic supply chain alongside its key partners, who have made it possible to achieve the speedy rollout of these IPs. For example, the 14.4 Gbps LPDDR6 IP is produced entirely with the domestically available toolset.

LPDDR6-Specific Features

• I/O speed up to 14.4Gbps
• ECS (auto/manual) and Link ECC support
• System Meta Function Mode
• Dual/Per/All Bank Refresh (single/burst)
• Read-Modify-Write with Mask Write support
• Dynamic write NT-ODT
• DVFSL mode
• x24/x48 burst modes
• Normal and dynamic/static efficiency modes

During the conference, Samsung, TSMC, SMIC, and over 30 leading companies in the industry supply chain were present. Innosilicon confirmed that its LPDDR6 IP is in use by a major Korean storage and DRAM producer, which likely hinted at Samsung, though it wasn't confirmed.

At the same time, Innosilicon unveiled that its IP and services are scalable from 28nm to 3nm solutions. China doesn't have access to sub-5nm (3nm) nodes due to restrictions on High-NA EUV machines. There are reports that China has been able to make its own DUV machines, but there is no credible proof. The first DUV machine is set to roll out this year, with double-figures set for shipment next year. That will only give China a small edge as the entire offshore industry moves to EUV lithography for the production of advanced chips.

The announcement by Innosilicon also comes at a time when SK Hynix and others are aiming for LPDDR6 mass production in the second half of 2026. There are reports that one of SK Hynix's LP6 customers is based in China, which shows that China is still dependent on offshore companies, as CXMT is still far behind in the LPDDR6/DDR6 race.

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