Snapdragon 835 Details Emerge With More Kryo Cores, Better GPU and Faster Storage Support
Snapdragon 835 officially became the first 10nm FinFET chipset to get announced, and unfortunately, the specification details were slim to none apart from detailing the energy efficient attributes of the SoC. However, the latest leak sheds more light on what will be present inside the chipset, so let us take a look and see the level of improvements that the chip will have in comparison to the competition as well as its predecessors.
Snapdragon 835 Leaked to Feature Next-Generation Kryo 200 Cores in an Octa-Core Package, Along With Other Significant Upgrades
The Snapdragon 835 has been leaked to feature the next-generation Kryo processor, which has been listed in the table below as Kryo 200. We don’t know if that’s what the actual name of the processor, but we’ll keep you updated on this. The details on the table suggest that the second-generation Kryo processor will feature an octa-core processor, where four cores will be responsible for tackling the more demanding tasks while the remaining ones will be low-powered cores designed to take care of things like background apps and less taxing activities, which is similar to what Cortex-A53 cores do.
Though the Kryo 200 has been listed as running an octa-core processor, the clock speeds of the cores haven’t been detailed. However, due to the 10nm FinFET architecture, the next-gen Kryo processor will probably be running at a higher frequency thanks to the smaller node. The GPU present in Snapdragon 835 has been listed as an Adreno 540. Once again, the clock speed of the chip has not been listed but thanks to the improved manufacturing process, the default frequencies could be higher, thus giving an edge to smartphone users in heavy-duty gaming applications and benchmarking tests.
Here’s the most interesting thing listed in the table; it has been stated that the Galaxy S8 will be running this chipset when it is announced in 2017. Following Samsung’s approach with announcing two chipset variants of both of its Galaxy S7 and S7 edge, we’re inclined to believe that the Korean firm will move in this direction once again. It will be a nice test run between the two variants, so we’ll keep you posted on that as well.
Snapdragon 835 also provides support for the UFS 2.1 standard, which will effectively increase the read and write speeds of the internal flash memory. All of these details highlight to a very impressive SoC that will land next year, and we cannot wait to see the new performance leaps that it crosses. What are your thoughts on the latest information leak of the chipset? Tell us your thoughts right away.
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