Galaxy S9 Will Be Using a Snapdragon 845, but It Could Be Manufactured on the Older 10nm FinFET LPE Node
Samsung’s Exynos 9810 announcement revealed that the manufacturer is going to be wasting no time in making the SoC as efficient as possible despite using the same lithography as the Exynos 8895; the same chip used in the Galaxy S8, Galaxy S8+ and Galaxy Note 8. The Snapdragon 845 is also going to be manufactured on the same 10nm production technology but there is going to be a vast difference between the two chipsets.
Snapdragon 845 Said to Be Made on the 10nm FinFET LPE Process – Exynos 9810 Gets the Better 10nm LPP Process
According to a rumor originating from China, the Snapdragon 845 is going to be manufactured on the 10nm FinFET LPE process. For good measure, when the Snapdragon 835 was officially released and ready to power devices of the future, it too was manufactured on the 10nm FinFET LPE technology. So what is the difference between LPE and LPP?
The advantage of using LPP or ‘Low Power Plus’ is that it results in 10 percent higher performance and 15 percent greater efficiency. In other words, the Exynos 9810 looks to be having a clear advantage over the Snapdragon 845 in both performance and battery consumption scores.
Potentially, these results could evidently be seen in the Galaxy S9 and Galaxy S9+, especially when U.S.-based customers get their hands on them.
It will be very interesting to see how big of a difference can be seen in real-world scenarios but it also appears that Samsung is going to outfit both of these devices with the latest generation of UFS storage. This storage will aid in recording 4K video at 60 frames per second and will also help to make the phone thoroughly snappy.
While having a faster and more efficient SoC alone might not make a difference, we are eager to see what the benchmarking results have to say about this.