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Samsung Officially Announces Mass Production of 10nm FinFET SoCs

Omar Sohail
Posted Oct 17, 2016
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The goal to announce Galaxy S8 much earlier has prompted Samsung to make the announcement that the firm has begun mass production of the industry’s first ever 10nm FinFET process. The application processors sporting this new manufacturing process might not be found this year, but they will definitely be making an appearance early next year.

Samsung Exynos SoC Will Be Manufactured on the 10nm FinFET Process – Galaxy S8 Most Likely to the First Recipient of the Efficient Chipset

After Samsung initiated its mass production of the 14nm FinFET node, the company has stepped up its game and announced the leading-edge process technology to the mass market with its latest offering.

Jong Shik Yoon, Executive Vice President, Head of Foundry Business at Samsung Electronics stated the following regarding the announcement:

“The industry’s first mass production of 10nm FinFET technology demonstrates our leadership in advanced process technology. We will continue our efforts to innovate scaling technologies and provide differentiated total solutions to our customers.”

The new 10nm FinFET LPE process adopts an advanced 3D transistor structure that features additional enhancements in both process technology and design compared to its predecessor node. The smaller lithographic process will be able to allow up to a 30 percent increase in area efficiency, coupled with a 27 percent higher performance ratio, and of course, one of the most important perks, a 40 percent lowered power consumption metric. Manufacturing the 10nm FinFET node was definitely no easy task, which is why in order to avoid scaling limitations, Samsung had to employ new cutting edge techniques such as triple-patterning to allow bi-directional routing.

However, this is only the beginning. After the announcement of the 10nm FinFET LPE process, its second generation 10nm FinFET LPP process will be targeted to future handsets during the second half of 2017. This process will promise even better efficiency and performance compared to the 14nm FinFET process.

Galaxy S8 Leak Leans Towards a 4K Display and Hefty Amounts of RAM

It is clear that while Samsung will be partnering with several firms to lend its technology for future mobile chipsets, its future Exynos SoC, which according to some, is being referred to as Exynos 8895 is going to be manufactured on this process. The chipset is going to be present inside the company’s upcoming Galaxy S8, which is also said to be introduced in the Snapdragon 830 variant, also to be produced on the 10nm FinFET LPE architecture.

What did you think of the latest announcement? Let us know your thoughts right away.

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